BBO Pockels Cells

BBO Pockels Cells

Features: • minimal piezoelectric ringing • low absorption • ceramic aperture is available • broad transmission range from 200 nm to 2000 nm • compact size Applications: • high repetition rate DPSS… Read more →

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Product

Design wavelength 800 nm - 1064 nm · 3 values Any nm
nm
Quarter-wave DC voltage 1.3 kV - 7.5 kV · 18 values Any kV
kV
20 catalog variants — refine the spec to narrow it down.
SKU Product Type Material Shape Type Design wavelength Quarter-wave DC voltage Sealing
PCB3D-C-1030 Transverse Field PC BBO Round 1030 nm 1.7 kV Sealed
5 in stock Ships in: 2–5 calendar days
$2,904
PCB3D-C-1064 Transverse Field PC BBO Round 1064 nm 1.8 kV Sealed
Out of stock Ships in: 57–60 calendar days
$2,904
PCB3D-C-800 Transverse Field PC BBO Round 800 nm 1.3 kV Sealed
Out of stock Ships in: 57–60 calendar days
$3,768
PCB3D/25-C-1030 Transverse Field PC BBO Round 1030 nm 1.4 kV Sealed
2 in stock Ships in: 2–5 calendar days
$3,960
PCB3D/25-C-1064 Transverse Field PC BBO Round 1064 nm 1.5 kV Sealed
Out of stock Ships in: 57–60 calendar days
$3,960
PCB3S-C-1030 Transverse Field PC BBO Round 1030 nm 3.4 kV Sealed
Out of stock Ships in: 57–60 calendar days
$1,860
PCB3S-C-1064 Transverse Field PC BBO Round 1064 nm 3.5 kV Sealed
Out of stock Ships in: 57–60 calendar days
$1,860
PCB3S-C-800 Transverse Field PC BBO Round 800 nm 2.6 kV Sealed
Out of stock Ships in: 57–60 calendar days
$3,120
PCB3S/25-C-1030 Transverse Field PC BBO Round 1030 nm 2.9 kV Sealed
Out of stock Ships in: 57–60 calendar days
$2,394
PCB3S/25-C-1064 Transverse Field PC BBO Round 1064 nm 3 kV Sealed
Out of stock Ships in: 57–60 calendar days
$2,394
PCB4D-C-1030 Transverse Field PC BBO Round 1030 nm 2.2 kV Sealed
13 in stock Ships in: 2–5 calendar days
$3,912
PCB4D-C-1064 Transverse Field PC BBO Round 1064 nm 2.3 kV Sealed
Out of stock Ships in: 57–60 calendar days
$3,912
PCB4D-C-800 Transverse Field PC BBO Round 800 nm 1.7 kV Sealed
Out of stock Ships in: 57–60 calendar days
$5,268
PCB4S-C-1030 Transverse Field PC BBO Round 1030 nm 4.5 kV Sealed
Out of stock Ships in: 57–60 calendar days
$2,388
PCB4S-C-1064 Transverse Field PC BBO Round 1064 nm 4.6 kV Sealed
1 in stock Ships in: 2–5 calendar days
$2,388
PCB6.3D-C-1030 Transverse Field PC BBO Round 1030 nm 3.75 kV Sealed
Out of stock Ships in: 57–60 calendar days
$9,900
PCB6.3D-C-1064 Transverse Field PC BBO Round 1064 nm 3.8 kV Sealed
Out of stock Ships in: 57–60 calendar days
$9,900
PCB6.3S-C-1030 Transverse Field PC BBO Round 1030 nm 7.4 kV Sealed
Out of stock Ships in: 57–60 calendar days
$5,100
PCB6.3S-C-1064 Transverse Field PC BBO Round 1064 nm 7.5 kV Sealed
Out of stock Ships in: 57–60 calendar days
$5,100
PCB8D-C-1030 Transverse Field PC BBO Round 1030 nm 4.5 kV Sealed
Out of stock Ships in: 57–60 calendar days
$15,540

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Specifications

Product Type Transverse Field PC
Material BBO
Shape Type Round
Transmission, % 98 % - 100 %
Sealing Sealed

Description

Features:

  • minimal piezoelectric ringing
  • low absorption
  • ceramic aperture is available
  • broad transmission range from 200 nm to 2000 nm
  • compact size

Applications:

  • high repetition rate DPSS Q-switch
  • high repetition rate regenerative amplifier control
  • cavity dumping
  • beam chopper

Pockels cell are used to change the polarization state of light passing through it when a voltage is applied to the electrodes of electro-optic crystals such as BBO. When used in conjunction with polarizer, Pockels cells can be used as fast optical switches. Typical applications include Q-switching of the laser cavity, laser cavity dumping and coupling light into and from regenerative amplifiers.

BBO based Pockels cells can be useful at wavelengths from the UV to more than 2 μm. Low piezoelectric ringing makes these Pockels cells attractive for the control of high-power and high pulse repetition rate lasers. Fast switching electronic drivers properly matched to the cell are available for Q-switching, cavity dumping and other applications. Pockels cells of PCB series are transverse field devices. Low electro-optical coefficient of BBO results in high operating voltages. The quarter-wave voltage is proportional to the ratio of electrode spacing and crystal length. As a result, smaller aperture devices have lower quarter-wave, however even for 2.5 mm aperture devices the quarter-wave voltage is as high as 4 kV @ 1064 nm. Double crystal design is employed to reduce required voltages and to allow operation in half-wave mode with fast switching times.

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